Infineon BSC010NE2LSI: Datasheet, Application Circuit, and Typical Characteristics
The Infineon BSC010NE2LSI is a benchmark in power semiconductor technology, representing the pinnacle of OptiMOS™ low-voltage power MOSFET performance. Engineered for maximum efficiency and power density in demanding applications, this component is a cornerstone for modern power electronics design. This article delves into its key specifications, a typical application circuit, and its defining performance characteristics.
Datasheet Overview: Key Parameters
The BSC010NE2LSI is an N-channel MOSFET housed in a compact, low-inductance SuperSO8 package. Its core strength lies in its exceptionally low on-state resistance (RDS(on)) of just 1.0 mΩ (max. at VGS = 10 V). This ultra-low resistance is the primary factor behind its high efficiency, as it minimizes conduction losses. With a continuous drain current (ID) rating of 100 A and a drain-source voltage (VDS) of 25 V, it is ideally suited for high-current, low-voltage switching applications. Other critical parameters from the datasheet include a low gate charge (Qg) and a high switching speed, which collectively ensure minimal switching losses and enable operation at high frequencies.
Typical Application Circuit: Synchronous Buck Converter
A primary application for the BSC010NE2LSI is as the low-side switch in a synchronous buck converter, a common topology for point-of-load (POL) voltage regulation in devices like servers, telecom equipment, and consumer electronics.
In this circuit:
The high-side switch (often a similar OptiMOS™ device) is controlled by a PWM signal from a dedicated driver IC.
The BSC010NE2LSI is used as the low-side (synchronous) switch, which conducts during the freewheeling period of the switching cycle.
Its ultra-low RDS(on) is critical here, as it directly reduces the power loss during the freewheeling phase, which is a dominant loss mechanism in such converters.
A driver IC is essential to rapidly charge and discharge the MOSFET's gate, leveraging its low gate charge to achieve clean and fast switching transitions, further optimizing efficiency.
This configuration allows the converter to achieve peak efficiency levels exceeding 95%, making it indispensable for energy-sensitive designs.
Typical Characteristics: Performance Insights
The component's performance is best understood through its typical characteristic curves:
Output Characteristics: The curve of drain current (ID) vs. drain-source voltage (VDS) for various gate-source voltages (VGS) demonstrates its strong saturation current capability and the benefits of its low on-resistance.
Transfer Characteristics: The ID vs. VGS curve shows a standard threshold voltage (VGS(th)), typically around 2.1 V, ensuring robust noise immunity and ease of drive.
Switching Behavior: Graphs of switching times (turn-on and turn-off delay and rise/fall times) confirm its fast switching capability, which is essential for high-frequency operation and reducing switching losses.
Body Diode Forward Voltage: The characteristics of the intrinsic body diode are also vital for synchronous rectification, and the BSC010NE2LSI exhibits a typical forward voltage (VSD) of around -1.3 V, contributing to low reverse recovery losses.
The Infineon BSC010NE2LSI is a superior choice for designers seeking to maximize efficiency and power density in high-current, low-voltage applications. Its industry-leading low RDS(on) and excellent switching performance make it a pivotal component in advanced power conversion systems like server VRMs, automotive power management, and high-performance computing.
Keywords:
1. Low RDS(on)
2. Synchronous Buck Converter
3. High Current Switching
4. Power Efficiency
5. OptiMOS™ Technology
